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Dynamic Circuit Model of a SiC VJFET

Solution Apr 28, 2022

SiC semiconductors perform considerably well on various parameters like high temperatures, frequency, voltage, and several others.

Next Generation of GaN for Electrification

Solution Apr 28, 2022

Gallium nitride is a key component of future energy-efficient electric vehicles and 5G networks. Hexagem, a Lund University–based startup, is developing a new solution at the Swedish research institute Rise testbed ProNano. This solution should contribute to greater electrification and a sustainable future.

Wide-Bandgap Semiconductors Drive Vehicle Electrification

Solution Apr 28, 2022

In a panel session on wide-bandgap semiconductors for EVs at the recent Advanced Automotive Tech Forum, three industry experts discussed efforts to address GaN and SiC current challenges and future opportunities.

New Silicon Power MOSFET Technology Rivals GaN with Near-Zero Reverse Recovery and Low On-Resistance

Solution Apr 14, 2022

This new silicon power mosfet offers near-zero reverse-recovery losses, bringing an advantage to silicon that is usually seen only in gallium nitride technologies while maintaining the cost and compatibility advantages of silicon.

Standards are Needed to Fully Control Air in Buildings

Solution Apr 14, 2022

We’ll explore how replaceable standardized fans and dampers could potentially be used in next generation HVAC systems.

Multi-phase MHZ Converter with GaN

Solution Apr 14, 2022

This article presents three different designs affecting measurements of a non-invasive contactless current sensor. The converter is a two-phase DC/DC GaN converter with 120VDC input operating at 6.7MHz. 120VDC is a standard voltage level in the secondary power system at the International Space Station (ISS).

Keeping Cool and Calm in Tight Environments — The GaN Way

Solution Mar 24, 2022

GaN offers lower conduction and switching losses that enable higher switching-frequency operation at high efficiency adapters.

Wide-Bandgap Materials Address EV Power and Efficiency Requirements

Solution Mar 24, 2022

SiC and GaN technologies have grown tremendously over the years, demonstrating that they can hugely benefit power management

New GaN Technology Simplifies Driving GaN-Based HEMTs

Solution Mar 24, 2022

GaN-based lateral transistors can operate at high switching frequencies, allowing for a very compact design.

LCR Meter with Extended Frequency Range Boosts Measurement Performance

Solution Mar 24, 2022

By measuring the phase-sensitive ratio of the voltage between two electrical ports of the device and the resulting current flowing through the same, an LCR meter allows to measure the absolute impedance and phase, as well as its real and imaginary parts. Rohde & Schwarz recently introduced a new family of LCR meters.

Impedance Matching for NFC Applications: Part 2

Solution Feb 12, 2022

The challenge in enabling a device to communicate via NFC lies in the filter and matching network for the NFC antenna. Part 1 of this article introduced the theory of complex conjugate impedance matching.

Wide-Bandgap Semiconductors: The Next Wave of GaN and SiC

Solution Feb 12, 2022

The WBG panel discussion focused on “the next wave of GaN and SiC,” taking its cue from the day’s topic presentations.